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Novette facility: activation and experimental results*
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- Journal:
- Laser and Particle Beams / Volume 3 / Issue 2 / May 1985
- Published online by Cambridge University Press:
- 09 March 2009, pp. 173-188
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Low dislocation density, high power InGaN laser diodes
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 9 / 2004
- Published online by Cambridge University Press:
- 13 June 2014, e3
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- 2004
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Light emitters fabricated on bulk GaN substrates. Challenges and achievements.
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- MRS Online Proceedings Library Archive / Volume 693 / 2001
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- 21 March 2011, I4.7.1
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- 2001
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GaN Crystals: Growth and Doping Under Pressure
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
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- 10 February 2011, 15
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- 1997
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Intrinsic and Thermal Stress in Gallium Nitride Epitaxial Films
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
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- 10 February 2011, 775
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- 1996
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Stress Compensation Techniques in Thin Layers Applied to Silicon Micromachining
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- Journal:
- MRS Online Proceedings Library Archive / Volume 284 / 1992
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- 22 February 2011, 119
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- 1992
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